Asylum Research

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GaFeO3 Thin Film

180nm GaFeO3 thin film epitaxially grown on ITO buffered yittria stabilized zirconia. PFM amplitude overlaid on topography (left) and PFM phase overlaid on topography (right). 1.25µm scan.
 
Sample courtesy of Somdutta Mukherjee, Rajeev Gupta and Ashish Garg, Department of Materials Science and Engineering, Indian Institute of Technology, Kanpur.

 


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