Asylum Research

Galleries | Materials | Semiconductors

 

sMIM makes higher signal-to-noise measurements

sMIM delivers at least 10X higher signal-to-noise compared to scanning capacitance microscopy (SCM) and scanning microwave microscopy (SMM). When used for dopant profiling, this sensitivity enables differentiation of dopant concentrations <1014 atoms/cm3. For DC capacitance measurements, sMIM has demonstrated a <0.5 aF noise floor. Even scanning 80X faster (20 Hz vs. 0.25 Hz line scan rates) and at 1000X lower source power (-15 dBm vs. 15 dBm), the signal-to-noise of sMIM images is still much better than SMM.

 


Oxford Instruments Asylum Research, Inc. • 6310 Hollister Ave. • Santa Barbara, CA  93117 • +1-805-696-6466AFM.info@oxinst.com