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Engineering Nanoelectronic Devices

‘Hover pass’ microscopy data of a typical CNT FET. (a) EFM (Vsd = 20mV, Vbg = 0V, Vtip = 5 V, height = 20nm). Color scale shows phase of cantilever response. (b) Alternating current EFM (Vsd = 100mV @ 63 kHz, Vbg = 0V, Vtip = 2V, height = 20nm). Color scale shows amplitude of cantilever response. (c) SGM (Vsd = 20mV, Vbg = 0V, Vtip = 5V, height = 20nm). Color scale shows the change in current, ΔIsd, through the device. (d) Tip-modulated SGM (Vsd = 20mV, Vbg= 0V, Vtip = 5V, height = 20nm). Color scale shows the change in current at the cantilever fundamental frequency, ΔIsd, ac.

Data courtesy of J. Prisbrey, J. Park, K. Blank, A. Moshar and E. Minot, "Scanning Probe Techniques for Engineering Nanoelectronic Devices", Asylum Research application note.

 


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