Asylum Research

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Ion Sputtered Silicon Carbide

Classic ion-beam induced cone formation on sputtered Silicon Carbide. Impurities on the
original surface give rise to cone growth, shadowed from the incident ion bombardment. Ions
reflecting off the cones dig a deeper channel or moat around the base. Imaged with the MFP-3D AFM.

Image courtesy of S. MacLaren, University of Illinois at Urbana-Champaign.


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