Asylum Research

Galleries | Materials | Nanostructures

 

Ion Sputtered Silicon Carbide

Classic ion-beam induced cone formation on sputtered Silicon Carbide. Impurities on the
original surface give rise to cone growth, shadowed from the incident ion bombardment. Ions
reflecting off the cones dig a deeper channel or moat around the base. Imaged with the MFP-3D AFM.

Image courtesy of S. MacLaren, University of Illinois at Urbana-Champaign.

 


Oxford Instruments Asylum Research, Inc. • 6310 Hollister Ave. • Santa Barbara, CA  93117 • +1-805-696-6466AFM.info@oxinst.com