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Hydrogen processed 6H:SiC(0001)

Surface of 6H silicon carbide, (0001) after hydrogen processing. 2µm scan, 7nm Z range, captured in AC mode
on the Cypher. Most of the major horizontal steps are triple bilayer steps 0.75nm tall, each corresponding to
half of the ABCACB unit cell. Triangular pits on the terraces are 0.25nm deep, the thickness of a single SiC
bilayer. The threefold symmetry of this surface is evident in the triangular pits.

Sample courtesy Nathan Guisinger, Hong Zheng, and John Mitchell - Argonne National Laboratory.

 


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